MJE200 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Features:-
• High DC current gain
• Low collector−emitter saturation voltage
• High current−gain − bandwidth product
• Annular construction for low leakage
• These devices are Pb−Free and are RoHS compliant
Specifications:-
| Transistor Polarity | NPN |
| Collector−Emitter Voltage (VCEO) | 40VDC |
| Collector−Base Voltage (VCBO) | 25VDC |
| Emitter−Base Voltage (VEBO) | 8VDC |
| Continuous Collector Current (Ic) | 5ADC |
| Continuous Base Current (Ib) | 1ADC |
| Power Dissipation (Pd) | 15W |
| Operating Temperature Range | -65 – 150°C |
| DC Current Gain (hFE) | 45-180 |
* product image for illustration purposes only. actual product may vary.
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