BD241C NPN Power Transistor 100V 3A TO-220 Package

32.00 Excluding tax

BD241C is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features:-

  • Low saturation voltage
  • Simple drive requirements
  • High safe operating area
  • For low distortion complementary designs
  • Easy to carry and handle

Specifications:-

Transistor Polarity NPN
Collector−Emitter Voltage (VCEO) 100V
Emitter−Base Voltage (VEBO) 5V
Continuous Collector Current (Ic) 3A
Continuous Base Current (Ib) 1A
DC Current Gain (hFE) 25
Operating Temperature Range -65 – 150°C
Power Dissipation (Pd) 40W
Junction Temperature 150°C

bd241-transistor-datasheet

* product image for illustration purposes only. actual product may vary.

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