IRFP4568 Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features:-
- Advanced Planar Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant
Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 150V |
| Continuous Drain Current (Id) | 171A |
| Drain-Source Resistance (Rds On) | 5.9mOhms |
| Gate-Source Voltage (Vgs) | 30V |
| Gate Charge (Qg) | 227 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 517W |
* product image for illustration purposes only. actual product may vary.
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