IRF630 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Compliant to RoHS directive 2002/95/EC
Detailed Specifications:-
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Drain-Source Breakdown Voltage (Vds) | 200V |
Continuous Drain Current (Id) | 9A |
Drain-Source Resistance (Rds On) | 0.4Ohms |
Gate-Source Voltage (Vgs) | 20V |
Gate Charge (Qg) | 43 nC |
Operating Temperature Range | -55 – 150°C |
Power Dissipation (Pd) | 74W |
* product image for illustration purposes only. actual product may vary.
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