2SK2698 N-Channel enhancement mode power field effect transistors are produced using Toshiba proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features:-
• Low drain−source ON resistance
• High forward transfer admittance
• Low leakage current
• Enhancement mode
Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 500V |
| Continuous Drain Current (Id) | 15A |
| Drain-Source Resistance (Rds On) | 0.35Ohms |
| Gate-Source Voltage (Vgs) | 30V |
| Gate Charge (Qg) | 58 nC |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 150W |
* product image for illustration purposes only. actual product may vary.
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