2SK1120 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features:-
• Low drain−source ON resistance
• High forward transfer admittance
• Low leakage current
• Enhancement mode
• RDS (ON) = 1.5 Ω (typ.)
• |Yfs| = 4.0 S (typ.)
• IDSS = 300 μA (max) (VDS = 800 V)
• 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 1000V |
| Continuous Drain Current (Id) | 8A |
| Drain-Source Resistance (Rds On) | 1.8Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 120 nC |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 150W |
* product image for illustration purposes only. actual product may vary.
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