The CNY65 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for the highest safety requirements of > 3 mm.
Features:-
• Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak
• Thickness through insulation 3 mm
• Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI 200
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Specification:-
| Parameter | Value |
| Package / Case | DIP-4 |
| Length | 17.8 mm |
| Width | 9.6 mm |
| Height | 6.1 mm |
| Collector-Emitter Breakdown Voltage | 32 V |
| Configuration | 1 Channel |
| Current Transfer Ratio | 100 % to 200 % |
| Description/Function | Optocoupler, Phototransistor Output, Very High Isolation Voltage |
| Fall Time | 2.7 us |
| Isolation Voltage | 8200 Vrms |
| Maximum Collector Current | 50 mA |
| Maximum Collector Emitter Saturation Voltage | 0.3 V |
| Maximum Collector Emitter Voltage | 32 V |
| Maximum Operating Temperature | + 85 C |
| Minimum Operating Temperature | – 55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Output Type | NPN Phototransistor |
| Packaging | Tube |
| Pd – Power Dissipation | 250 mW |
| Product Type | Transistor Output Optocouplers |
| Rise Time | 2.4 us |
| Series | CNY |
* product image for illustration purposes only. actual product may vary.
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