LF356 JFET Input Op-Amp IC DIP-8 Package

49.00 Excluding tax

The LF356 device are the first monolithic JFET input operational amplifiers to incorporate well matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

Features:-

Advantages 

  • Replace Expensive Hybrid and Module FET Op Amps
  • Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices
  • Excellent for Low Noise Applications Using Either High or Low Source Impedance
  • Very Low 1/f Corner
  • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
  • New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
  • Internal Compensation and Large Differential Input Voltage Capability

Common Features 

  • Low Input Bias Current: 30 pA
  • Low Input Offset Current: 3 pA
  •  High Input Impedance: 1012 Ω
  •  Low Input Noise Current: 0.01 pA/√Hz
  • High Common-Mode Rejection Ratio: 100 dB
  • Large DC Voltage Gain: 106 dB

Uncommon Features 

  • Extremely Fast Settling Time to 0.01%: 1.5 μs
  • Fast Slew Rate: 12 V/µs
  • Wide Gain Bandwidth: 5 MHz
  •  Low Input Noise Voltage: 12 nV/√Hz

Specification:-

Parameter Min Max Unit
 Supply Voltage ±18 V
Differential input voltage ±30 V
Output short-circuit (to ground) Continuous
Operating temperature -40 125 °C
Soldering information (lead temp.) 260 °C
Storage temperature -65 150 °C
Input voltage ±16 V

lf356-ic-datasheet

* product image for illustration purposes only. actual product may vary.

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