IRF510 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Features:-
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 100V |
| Continuous Drain Current (Id) | 5.6A |
| Drain-Source Resistance (Rds On) | 540mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 8.3 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 43W |
* product image for illustration purposes only. actual product may vary.
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