20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- Improved transconductance
Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 650V |
| Continuous Drain Current (Id) | 20.7A |
| Drain-Source Resistance (Rds On) | 190mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Configuration | Single |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 208W |
* product image for illustration purposes only. actual product may vary.
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