FDA50N50 MOSFET is high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Features:-
- Low offset voltage
- Full-voltage operation
- Easily driven without buffer
- Low error voltage
- No high-temperature run-away
- Excellent thermal stability
Specifications
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 500V |
| Continuous Drain Current (Id) | 48A |
| Drain-Source Resistance (Rds On) | 105mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 137 nC |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 625W |
* product image for illustration purposes only. actual product may vary.
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