38N30 N-Channel enhancement mode power field effect transistors. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Features
• Low gate charge (Typ. 90 nC)
• Low crss (Typ. 70 pF)
• 100% avalanche tested
• RoHS compliant
Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 300V |
| Continuous Drain Current (Id) | 38.4A |
| Drain-Source Resistance (Rds On) | 85mOhms |
| Gate-Source Voltage (Vgs) | 30V |
| Gate Charge (Qg) | 120 nC |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 290W |
* product image for illustration purposes only. actual product may vary.
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