IRFP250N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
- Ease of paralleling
- Simple drive requirements
Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 200V |
| Continuous Drain Current (Id) | 30A |
| Drain-Source Resistance (Rds On) | 0.075Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 123 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 214W |
* product image for illustration purposes only. actual product may vary.
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