BD239C is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Features:-
• Low saturation voltage
• Simple drive requirements
• High safe operating area
• For low distortion complementary designs
• Easy to carry and handle
Specifications:-
| Transistor Polarity | NPN |
| Collector−Emitter Voltage (VCEO) | 100V |
| Collector−Base Voltage (VCBO) | 115V |
| Continuous Collector Current (Ic) | 2A |
| Continuous Base Current (Ib) | 0.6A |
| DC Current Gain (hFE) | 40 |
| Operating Temperature Range | -65 – 150°C |
| Power Dissipation (Pd) | 30W |
| Junction Temperature | 150°C |
* product image for illustration purposes only. actual product may vary.
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