BD241C is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Features:-
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
- Easy to carry and handle
Specifications:-
Transistor Polarity | NPN |
Collector−Emitter Voltage (VCEO) | 100V |
Emitter−Base Voltage (VEBO) | 5V |
Continuous Collector Current (Ic) | 3A |
Continuous Base Current (Ib) | 1A |
DC Current Gain (hFE) | 25 |
Operating Temperature Range | -65 – 150°C |
Power Dissipation (Pd) | 40W |
Junction Temperature | 150°C |
* product image for illustration purposes only. actual product may vary.
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